Fraunhofer teams for 300mm ferroelectric memory AI devices

NY CREATES and Fraunhofer Institutes Announce Joint Development Agreement to Advance Memory Devices at the 300mm Wafer Scale - Semiconductor Digest

NY CREATES and Fraunhofer IPMS announced at a signing ceremony a new Joint Development Agreement (JDA) to drive research and development focused on memory devices.

16 years after Qimonda-Pleite: Researchers from Dresden and New York pave the way for the production of ferroelectric data storage systems in chip factories Dresden, 16 May 2025. Even in short-lived microelectronics, it sometimes takes a long breath until a far-reaching invention comes to a breakthrough.

Fraunhofer teams for 300mm ferroelectric memory AI devices

Fraunhofer IPMS continues to build its position in ferroelectric memory device technology with a Joint Development Agreement (JDA) with NY Creates in Albany, New York, to drive research and development on 300mm wafers. Ferroelectric memories are seen as the next generation of non-volatile devices that scale beyond flash memories, which are limited to process technologies […] The post Fraunhofer teams for 300mm ferroelectric memory AI devices app…